JPH056319B2 - - Google Patents
Info
- Publication number
- JPH056319B2 JPH056319B2 JP58175188A JP17518883A JPH056319B2 JP H056319 B2 JPH056319 B2 JP H056319B2 JP 58175188 A JP58175188 A JP 58175188A JP 17518883 A JP17518883 A JP 17518883A JP H056319 B2 JPH056319 B2 JP H056319B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- electrodes
- transparent conductive
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 20
- 238000004544 sputter deposition Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000011159 matrix material Substances 0.000 claims 1
- 238000005401 electroluminescence Methods 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- -1 argon ions Chemical class 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58175188A JPS6068590A (ja) | 1983-09-24 | 1983-09-24 | 透明導電膜上への絶縁膜の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58175188A JPS6068590A (ja) | 1983-09-24 | 1983-09-24 | 透明導電膜上への絶縁膜の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6068590A JPS6068590A (ja) | 1985-04-19 |
| JPH056319B2 true JPH056319B2 (en]) | 1993-01-26 |
Family
ID=15991819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58175188A Granted JPS6068590A (ja) | 1983-09-24 | 1983-09-24 | 透明導電膜上への絶縁膜の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6068590A (en]) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6320461A (ja) * | 1986-07-14 | 1988-01-28 | Nippon Telegr & Teleph Corp <Ntt> | 薄膜形成装置 |
| JP2773773B2 (ja) * | 1989-02-23 | 1998-07-09 | 関西日本電気株式会社 | 薄膜ｅｌパネルの製造方法 |
| GB0409521D0 (en) * | 2004-04-29 | 2004-06-02 | Fosroc International Ltd | Sacrificial anode assembly |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5821795B2 (ja) * | 1978-05-23 | 1983-05-04 | シャープ株式会社 | 薄膜ｅｌ素子の構造 |
-
1983
- 1983-09-24 JP JP58175188A patent/JPS6068590A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6068590A (ja) | 1985-04-19 |
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